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AH215
1 Watt, High Linearity HBT Amplifier
The Communications Edge TM
Product Information
Product Features
* 400 - 2300 MHz * +31.5 dBm P1dB * +46 dBm Output IP3 * 18 dB Gain @ 900 MHz * Single Positive Supply (+5 V) * SOIC-8 SMT Package
Product Description
The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply.
Functional Diagram
1 8
2 3
7
6
4
5
Applications
* Final stage amplifiers for Repeaters * Mobile Infrastructure * Defense / Homeland Security
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance (4)
Units Min
MHz dB dB dB dBm dBm dB dBm dBm mA V 400 10
Typ
2140 11 18 8 +31.5 +45 6.3 +26 +23 450 5
Max
Parameters
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB 7.0 900 18 -13 -7 +31 +46 +25.5
Typical
1960 12 -11 -10 +32 +46 +25.5 +23 5.5 6.2 +5 V @ 450 mA 2140 11 -18 -8 +31.5 +45
+29 +43.8
W-CDMA Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3) Device Voltage, Vcc
500
Noise Figure Supply Bias
4. Typical parameters reflect performance in a tuned application circuit at+25 C.
1. Test conditions unless otherwise noted: T = 25C, Vsupply = +5 V, Frequency = 2140 MHz in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to cal ulate the 3OIP using a 2:1 rule. c 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current typically will be 461 mA.)
Absolute Maximum Rating
Parameters
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power
Ordering Information
Part No.
AH215-S8 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140
Rating
-40 to +85 C -65 to +150 C +26 dBm +8 V 900 mA 5W
Description
1 Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004
AH215
1 Watt, High Linearity HBT Amplifier
The Communications Edge TM Product Information
Typical Device Data
S-Parameters (Vcc = +5 V, I cc = 450 mA, T = 25C, calibrated to device leads)
1.0
0.8
0.8
40 35 30 25 Gain (dB) 20 15
0.2
6 0.
6 0.
Swp Max 5.05GHz
2.0
1.0
Gain and Maximum Stable Gain
DB(|S[2,1]|) DB(GMax)
0. 4
S11
S22
Swp Max 5.05GHz
2. 0
0 3.
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
.4 -0
.4 -0
.0 -2
-0 .6
-0. 6
-0.8
.0 -2
Swp Min 0.05GHz
Swp Min 0.05GHz
-0.8
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 - 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, I cc = 450 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82
-177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68
24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09
122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99
-1.0
-40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37
17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22
-1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92
-1.0
-130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014" Getek, 4 total layers (0.062" thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004
-5. 0
-4. 0
-3 .0
-5. 0
2 -0.
2 -0.
-10.0
0.2
4.0 5.0
0. 4
3.0
4.0
5.0
10.0
-10.0
-4. 0
-3 .0
AH215
1 Watt, High Linearity HBT Amplifier
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
900 MHz Application Circuit (AH215-S8PCB900)
900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm +25.5 dBm 7.0 dB +5 V 450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency (MHz)
20 18
S21 (dB) S11 (dB)
S11 vs. Frequency
0 -4 -8 -12 -16 -20 840 +25C +85C -40C
S22 (dB)
S22 vs. Frequency
0 -4 -8 -12 -16 -20 840 +25C +85C -40C
16 14 12 10 8 840 +25C +85C -40C 860 880 900 920 940
860
880
900
920
940
860
880
900
920
940
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10 9 8 7 6 5 840 +25C +85C -40C 860 880 900 920 940
P1 dB (dBm) NF (dB)
P1 dB vs. Frequency
34 32 30 28 26 24 840 860 +25C +85C -40C
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 KHz offset, 30 KHz Meas BW, 900 MHz
-40 -45 -50 -55 -60 -65
880 900 Frequency (MHz) 920 940
+25C +85C -40C
-70 19 20 21 22 23 24 25 26 Output Channel Power (dBm) 27
Frequency (MHz)
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25C
OIP3 vs. Temperature
freq. = 900, 901 MHz, +15 dBm
OIP3 vs. Frequency
+25C, +15 dBm / tone
50 47
OIP3 (dBm)
50 47
OIP3 (dBm)
OIP3 (dBm)
50 47 44 41 38 35 840
44 41 38 35 10 13 16 19 Output Power (dBm) 22 25
44 41 38 35 -40
-15
10 35 Temperature (C )
60
85
860
880 900 Frequency (MHz)
920
940
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004
AH215
1 Watt, High Gain HBT Amplifier
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1960 MHz Application Circuit (AH215-S8PCB1960)
1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm +25.5 dBm 5.5 dB +5 V 450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
18 16
S21 (dB)
S11 vs. Frequency
0 -5 -10 -15 -20 +25C +85C -40C
S22 (dB)
S22 vs. Frequency
0 -5 -10 -15 -20 -25 1930 +25 C +85 C -40C 1940 1950 1960 1970 1980 1990
14 12 10 8 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990
S11 (dB)
-25 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
8 7
NF (dB) P1 dB (dBm)
P1 dB vs. Frequency
35 33 31 29 27 25 +25C +85C -40C
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. 885 KHz offset, 30 KHz Meas BW, 1960 MHz
6 5 4 3 2 1 0 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) +25C +85C -40C
1930
1940
1950
1960
1970
1980
1990
-40 -45 -50 -55 -60 -65 -70 -75 -80 -85
+25C +85C -40C
Frequency (MHz)
15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm)
OIP3 vs. Frequency
+25C, 15 dBm / tone
OIP3 vs. Temperature
freq. = 1960, 1961 MHz, +15 dBm
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25C
55 50
OIP3 (dBm)
55 51 47 43 39
OIP3 (dBm)
50 46 42 38 34 30 -15 10 35 Temperature ( C) 60 85 10 12 14 16 18 Output Power (dBm) 20 22
OIP3 (dBm)
45 40 35 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
35 -40
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004
AH215
1 Watt, High Gain HBT Amplifier
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
2140 MHz Application Circuit (AH215-S8PCB2140)
2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm +23 dBm 6.2 dB +5 V 450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15 12
S21 (dB) S11 (dB)
S11 vs. Frequency
-10 -14 -18 -22 -26 -30 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170 -20 2110
S22 (dB)
S22 vs. Frequency
0 -5 -10 +25C -15 +85C -40C 2120 2130 2140 2150 2160 2170
9 6 3 0 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
9 8 7 6 5 4 3 2 1 0 2110 34 32
P1 dB (dBm)
P1 dB vs. Frequency
-40 -45
ACPR (dBc)
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, 5MHz offset, 2140 MHz
NF (dB)
30 28 26 24 2110 +25C +85C -40C
-50 -55 -60 +25C +85C -40C
+25C +85C -40C 2120 2130 2140 2150 2160 2170
2120
2130
2140
2150
2160
2170
-65 19 20 21 22 23 Output Channel Power (dBm) 24
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Temperature
50 47
OIP3 (dBm) OIP3 (dBm)
OIP3 vs. Frequency
+25C, +15 dBm / tone
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25C
freq. = 2140, 2141 MHz, +15 dBm / tone
50 47 44 41 38 35 2110
OIP3 (dBm)
50 47 44 41 38 35 2120 2130 2140 2150 Frequency (MHz) 2160 2170 10 12 14 16 18 Output Power (dBm) 20 22
44 41 38 35 -40
-15
10 35 Temperature (C )
60
85
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004
AH215
1 Watt, High Gain HBT Amplifier
The Communications Edge TM Product Information
Outline Drawing
Product Marking
The component will be marked with an "AH215-S8" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
Land Pattern
MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8 All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 C 33 C / W 159 C
MTTF (million hrs)
MTTF vs. GND Tab Temperature
1000000 100000 10000 1000 100 50 60 70 80 90 100 Tab temperature ( C)
Parameter
Rating
Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground slug underneath the device. 2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Tjc is a function of the voltage at pins 6 & 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com July 2004

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